The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Sep. 25, 2012
Samsung Electronics Co., Ltd, Suwon-Si, KR;
WonChan Lee, Suwon-si, KR;
Seong-Bo Shim, Suwon-si, KR;
Sunghoon Jang, Hwaseong-si, KR;
Gun Huh, Gwangju, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method for process proximity correction may include obtaining a point spread function (PSF) from test patterns, the test patterns including an etching process performed thereon, generating a target layout with polygonal patterns, dividing the target layout into grid cells, generating a density map including long-range layout densities, each of the long-range layout densities being obtained from the polygonal patterns located within a corresponding one of the grid cells, performing a convolution of the long-range layout densities with the PSF to obtain long-range etch skews for the grid cells, and generating an etch bias model including short-range etch skews and the long-range etch skews, each of the short-range etch skews being obtained from a neighboring region of a target pattern selected from the polygonal patterns in each of the grid cells.