The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2014

Filed:

Oct. 03, 2007
Applicants:

Ferdinando Bedeschi, Biassono, IT;

Claudio Resta, Pavia, IT;

Richard Fackenthal, Carmichael, CA (US);

Ruili Zhang, Rancho Cordova, CA (US);

Inventors:

Ferdinando Bedeschi, Biassono, IT;

Claudio Resta, Pavia, IT;

Richard Fackenthal, Carmichael, CA (US);

Ruili Zhang, Rancho Cordova, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A bit alterable memory may include current generators in a periphery outside the main memory core. Current may be generated in the periphery and driven into the core. As a result, the capacitance of the memory cells has a lowered effect. The current may be generated using the chip supply voltage and then mirrored using a pump voltage. In some embodiments, the mirroring may be ratioed at the partition level and multiplied at the plane level. A delay may be provided before applying the currents to the cell to accommodate for transients.


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