The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Jan. 24, 2007
Sakae Koyata, Tokyo, JP;
Kazushige Takaishi, Tokyo, JP;
Tomohiro Hashii, Tokyo, JP;
Katsuhiko Murayama, Tokyo, JP;
Takeo Katoh, Tokyo, JP;
Sakae Koyata, Tokyo, JP;
Kazushige Takaishi, Tokyo, JP;
Tomohiro Hashii, Tokyo, JP;
Katsuhiko Murayama, Tokyo, JP;
Takeo Katoh, Tokyo, JP;
Sumco Corporation, Tokyo, JP;
Abstract
A method for manufacturing an epitaxial wafer that can reduce occurrence of a surface defect or a slip formed on an epitaxial layer is provided. The manufacturing method is characterized by comprising: a smoothing step of controlling application of an etchant to a wafer surface in accordance with a surface shape of a silicon wafer to smooth the wafer surface; and an epitaxial layer forming step of forming an epitaxial layer formed of a silicon single crystal on the surface of the wafer based on epitaxial growth.