The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Aug. 23, 2012
Kedar Sapre, San Jose, CA (US);
Jing Tang, San Jose, CA (US);
Ajay Bhatnagar, Santa Clara, CA (US);
Nitin Ingle, San Jose, CA (US);
Shankar Venkataraman, San Jose, CA (US);
Kedar Sapre, San Jose, CA (US);
Jing Tang, San Jose, CA (US);
Ajay Bhatnagar, Santa Clara, CA (US);
Nitin Ingle, San Jose, CA (US);
Shankar Venkataraman, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride. The substrate having the double patterning features is provided to a process zone. An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber. The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate. The solid residue is sublimated by heating the substrate to a temperature of at least about 100° C.