The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Jan. 24, 2011
Ya-hsueh Hsieh, Kaohsiung, TW;
Teng-chun Tsai, Tainan, TW;
Wen-chin Lin, Tainan County, TW;
Hsin-kuo Hsu, Kaohsiung County, TW;
Ren-peng Huang, Changhua County, TW;
Chih-hsien Chen, Miaoli County, TW;
Chih-chin Yang, Tainan County, TW;
Hung-yuan LU, Kaohsiung, TW;
Jen-chieh Lin, Kaohsiung, TW;
Wei-che Tsao, Tainan, TW;
Ya-Hsueh Hsieh, Kaohsiung, TW;
Teng-Chun Tsai, Tainan, TW;
Wen-Chin Lin, Tainan County, TW;
Hsin-Kuo Hsu, Kaohsiung County, TW;
Ren-Peng Huang, Changhua County, TW;
Chih-Hsien Chen, Miaoli County, TW;
Chih-Chin Yang, Tainan County, TW;
Hung-Yuan Lu, Kaohsiung, TW;
Jen-Chieh Lin, Kaohsiung, TW;
Wei-Che Tsao, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A planarization method of manufacturing a semiconductor component is provided. A dielectric layer is formed above a substrate and defines a trench therein. A barrier layer and a metal layer are formed in sequence in the trench. A first planarization process is applied to the metal layer by using a first reactant so that a portion of the metal layer is removed. An etching rate of the first reactant to the metal layer is greater than that of the first reactant to the barrier layer. A second planarization process is applied to the barrier layer and the metal layer by using a second reactant so that a portion of the barrier layer and the metal layer are removed to expose the dielectric layer. An etching rate of the second reactant to the barrier layer is greater than that of the second reactant to the metal layer.