The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Nov. 08, 2012
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Hans-Joachim Barth, Munich, DE;
Mathias Vaupel, Regensburg, DE;
Rainer Steiner, Regensburg, DE;
Werner Robl, Regensburg, DE;
Jens Pohl, Bernhardswald, DE;
Joem Plagmann, Munich, DE;
Gottfried Beer, Nittendorf, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a seed layer over the barrier layer; forming an inhibitor layer over the seed layer; removing a portion of said inhibitor layer to expose a portion of the seed layer; and selectively depositing a fill layer on the exposed seed layer.