The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Jun. 23, 2011
Terry Arthur Francis, Schenectady, NY (US);
Satoshi Hasaka, Tokyo, JP;
Paul David Brabant, East Greenbush, NY (US);
Robert Torres, Jr., Parker, CO (US);
Hong He, Schenectady, NY (US);
Alexander Reznicek, Troy, NY (US);
Thomas N. Adam, Singerlands, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Terry Arthur Francis, Schenectady, NY (US);
Satoshi Hasaka, Tokyo, JP;
Paul David Brabant, East Greenbush, NY (US);
Robert Torres, Jr., Parker, CO (US);
Hong He, Schenectady, NY (US);
Alexander Reznicek, Troy, NY (US);
Thomas N. Adam, Singerlands, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Matheson Tri-Gas, Inc., Basking Ridge, NJ (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.