The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
May. 23, 2012
Chang-sheng Hsu, Hsinchu, TW;
Kuo-yuh Yang, Hsinchu County, TW;
Kuo-hsiung Huang, Hsinchu County, TW;
Yan-da Chen, Taipei, TW;
Chia-wen Lien, Taoyuan County, TW;
Chang-Sheng Hsu, Hsinchu, TW;
Kuo-Yuh Yang, Hsinchu County, TW;
Kuo-Hsiung Huang, Hsinchu County, TW;
Yan-Da Chen, Taipei, TW;
Chia-Wen Lien, Taoyuan County, TW;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A thinning method of a wafer is provided. The method includes the following steps. First, a wafer having a first surface, a second surface, and a side surface is provided, and the side surface is connected between the first surface and the second surface. At least one semiconductor device is formed on the first surface. Then, an anisotropy etching process is performed to the second surface with a mask to remove portions of the wafer while remaining the side surface thereby forming a number of grooves in the second surface and at least one reinforcing wall between the grooves. As a result, a thinned wafer is obtained.