The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Nov. 01, 2011
Applicants:
Chin-i Liao, Tainan, TW;
Teng-chun Hsuan, Tainan, TW;
Chin-cheng Chien, Tainan, TW;
Inventors:
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/165 (2013.01); H01L 29/66636 (2013.01); H01L 29/7834 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate and a plurality of transistors. The semiconductor substrate includes at least an iso region (namely an open region) and at least a dense region. The transistors are disposed in the iso region and the dense region respectively. Each transistor includes at least a source/drain region. The source/drain region includes a first epitaxial layer having a bottom thickness and a side thickness, and the bottom thickness is substantially larger than or equal to the side thickness.