The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
May. 27, 2010
Applicant:
Song Yun Kang, Nirasaki, JP;
Inventor:
Song Yun Kang, Nirasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/316 (2006.01); C07F 7/21 (2006.01); C23C 16/40 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/402 (2013.01); H01L 21/02126 (2013.01); H01L 21/02271 (2013.01);
Abstract
Disclosed is a starting material for use in forming a silicon oxide film on a substrate by the CVD method, comprising a siloxane compound having a carbonyl group, wherein the starting material is decomposed by applying energy, thereby releasing CO and producing a product having no dangling bond in the chemical structure, and the product contributes to the formation of the film. As a result, a silicon oxide film having a favorable step coverage is formed.