The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Aug. 02, 2013
Applicant:
Taiwan Semiconductor Manufacturing Campany, Ltd., Hsin-Chu, TW;
Inventors:
Oscar M. K. Law, Hsin-Chu, TW;
Kuo H. Wu, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 23/49827 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/13009 (2013.01);
Abstract
A system and method for making semiconductor die connections with through-silicon vias (TSVs) are disclosed. TSVs are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment this allows these connections to be made throughout the substrate instead of on the periphery of the substrate. In another embodiment, the TSVs are used as part of a power matrix to supply power and ground connections to the active devices and metallization layers through the substrate.