The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Mar. 13, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Chia-Jong Liu, Ping-Tung County, TW;
Yen-Liang Wu, Taipei, TW;
Chung-Fu Chang, Tainan, TW;
Yu-Hsiang Hung, Tainan, TW;
Pei-Yu Chou, Tainan, TW;
Home-Been Cheng, Keelung, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of controlling an etching process for forming an epitaxial structure includes the following steps. A substrate having a gate thereon is provided. A spacer is formed on the substrate beside the gate to define the position of the epitaxial structure. A thickness of the spacer is measured. The etching time of a first etching process is set according to the thickness. The first etching process is performed to form a recess in the substrate beside the spacer. The epitaxial structure is formed in the recess.