The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Feb. 18, 2009
Applicants:
Shih-yuan Cheng, Palo Alto, CA (US);
Shenjian Liu, San Ramon, CA (US);
Youn Gi Hong, Fremont, CA (US);
Qian Fu, Pleasanton, CA (US);
Inventors:
Shih-Yuan Cheng, Palo Alto, CA (US);
Shenjian Liu, San Ramon, CA (US);
Youn Gi Hong, Fremont, CA (US);
Qian Fu, Pleasanton, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a photoresist mask may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a substrate, ionizing the UV producing gas to produce UV rays to irradiate the substrate, and etching features into the substrate through the photoresist mask.
Cheng, Shih-Yuan. (2014). Line width roughness improvement with noble gas plasma (U.S. Patent No. 8753804). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8753804
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile