The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Jul. 06, 2012
Applicants:
Fang Lin, Zhubei, TW;
Ching-yu Chang, Yuansun Village, Yilang County, TW;
Inventors:
Fang Lin, Zhubei, TW;
Ching-Yu Chang, Yuansun Village, Yilang County, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods and materials for making a semiconductor device are described. The method includes providing a substrate, forming a surface-modified middle layer (SM-ML) that includes a fluorine-containing material over the substrate, forming a photoresist layer over the SM-ML, exposing the photoresist layer to an exposure energy, and developing the photoresist layer.
Lin, Fang. (2014). Surface-modified middle layers (U.S. Patent No. 8753797). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8753797
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile