The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Oct. 06, 2010
Applicants:
Chieh-chih Chen, Hsinchu County, TW;
Cheng-chi Lin, Toechen Township, Yilan County, TW;
Chen-yuan Lin, Taitung, TW;
Shih-chin Lien, Sinjhuang, TW;
Shyi-yuan Wu, Hsinchu, TW;
Inventors:
Chieh-Chih Chen, Hsinchu County, TW;
Cheng-Chi Lin, Toechen Township, Yilan County, TW;
Chen-Yuan Lin, Taitung, TW;
Shih-Chin Lien, Sinjhuang, TW;
Shyi-Yuan Wu, Hsinchu, TW;
Assignee:
Macronix International Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A high-voltage metal-oxide-semiconductor (HVMOS) device may include a source, a drain, a gate positioned proximate to the source, a drift region disposed substantially between the drain and a region of the gate and the source, and a self shielding region disposed proximate to the drain. A corresponding method is also provided.