The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Feb. 28, 2012
Yu Chao Lin, Rende Township, TW;
Chih-tang Peng, Taipei, TW;
Shun-hui Yang, Jungli, TW;
Ryan Chia-jen Chen, Chiayi, TW;
Chao-cheng Chen, Shin-Chu, TW;
Yu Chao Lin, Rende Township, TW;
Chih-Tang Peng, Taipei, TW;
Shun-Hui Yang, Jungli, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
Chao-Cheng Chen, Shin-Chu, TW;
Abstract
The disclosure relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a major surface; a plurality of first trenches having a first width and extending downward from the substrate major surface to a first height, wherein a first space between adjacent first trenches defines a first fin; and a plurality of second trenches having a second width less than first width and extending downward from the substrate major surface to a second height greater than the first height, wherein a second space between adjacent second trenches defines a second fin.