The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
May. 10, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Cheng-Tsung Chen, Hsin-Chu, TW;
Hsun-Ying Huang, Tainan, TW;
Yung-Cheng Chang, Zhubei, TW;
Yung-Fu Yeh, Sikou Township, TW;
Yu-Ping Chen, Hsin-Chu, TW;
Chi-Yuan Liang, Taichung, TW;
Shou Shu Lu, Kaohsiung, TW;
Juan-Lin Chen, Shanhua Township, TW;
Jia-Ren Chen, Tainan, TW;
Horng-Daw Shen, Hsin-Chu, TW;
Chi-Hsun Hsieh, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.