The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Feb. 10, 2012
Tung-ti Yeh, Tainan, TW;
Chung-yi Huang, New Taipei, TW;
Ya Wen Wu, Kaohsiung, TW;
Hui Mei Jao, Tainan, TW;
Ting-chun Wang, Tainan, TW;
Shiu-ko Jangjian, Tainan, TW;
Chia-hung Chung, Shanhua Township, TW;
Tung-Ti Yeh, Tainan, TW;
Chung-Yi Huang, New Taipei, TW;
Ya Wen Wu, Kaohsiung, TW;
Hui Mei Jao, Tainan, TW;
Ting-Chun Wang, Tainan, TW;
Shiu-Ko JangJian, Tainan, TW;
Chia-Hung Chung, Shanhua Township, TW;
Abstract
A semiconductor device including a first wafer assembly having a first substrate and a first oxide layer over the first substrate. The semiconductor device further includes a second wafer assembly having a second substrate and a second oxide layer over the second substrate. The first oxide layer and the second oxide layer are bonded together by van der Waals bonds or covalent bonds. A method of bonding a first wafer assembly and a second wafer assembly including forming a first oxide layer over a first substrate. The method further includes forming a second oxide layer over a second wafer assembly. The method further includes forming van der Waals bonds or covalent bonds between the first oxide layer and the second oxide layer.