The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Dec. 05, 2008
Yuta Urano, Yokohama, JP;
Hiroyuki Nakano, Yokohama, JP;
Shunji Maeda, Yokohama, JP;
Sachio Uto, Yokohama, JP;
Yuta Urano, Yokohama, JP;
Hiroyuki Nakano, Yokohama, JP;
Shunji Maeda, Yokohama, JP;
Sachio Uto, Yokohama, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
When using a CCD sensor as a photo-detector in a device for inspecting foreign matters and defects, it has a problem of causing electric noise while converting the signal charge, produced inside by photoelectric conversion, into voltage and reading it. Therefore, the weak detected signal obtained by detecting reflected and scattered light from small foreign matters and defects is buried in the electric noise, which has been an obstacle in detecting small foreign matters and defects. In order to solve the above problem, according to the present invention, an electron multiplying CCD sensor is used as a photo-detector. The electron multiplying CCD sensor is capable of enlarging signals brought about by inputted light relatively to the electric noise by multiplying the electrons produced through photoelectric conversion and reading them. Accordingly, compared to a conventional CCD sensor, it can detect weaker light and, therefore, smaller foreign matters and defects.