The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2014

Filed:

Apr. 23, 2013
Applicant:

Ebara Corporation, Tokyo, JP;

Inventors:

Masayuki Nakanishi, Tokyo, JP;

Tetsuji Togawa, Tokyo, JP;

Kenya Ito, Tokyo, JP;

Masaya Seki, Tokyo, JP;

Kenji Iwade, Tokyo, JP;

Takeo Kubota, Tokyo, JP;

Assignee:

Ebara Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/30 (2006.01); H01L 21/46 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.


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