The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Dec. 17, 2009
Ken Nakata, Kanagawa, JP;
Seiji Yaegashi, Kanagawa, JP;
Ken Nakata, Kanagawa, JP;
Seiji Yaegashi, Kanagawa, JP;
Sumitomo Electric Device Innovations, Inc., Kanagawa, JP;
Abstract
A method for fabricating a semiconductor device includes: forming a GaN-based semiconductor layer on a substrate; forming a gate insulating film of aluminum oxide on the GaN-based semiconductor layer at a temperature equal to or lower than 450° C.; forming a protection film on an upper surface of the gate insulating film; performing a process with an alkaline solution in a state in which the upper surface of the gate insulating film is covered with the protection film; and forming a gate electrode on the gate insulating film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile