The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Sep. 06, 2012
Eun Seok Choi, Gyeonggi-do, KR;
Jung Ryul Ahn, Gyeonggi-do, KR;
SE Hoon Kim, Gyeonggi-do, KR;
Yong Dae Park, Gyeonggi-do, KR;
IN Geun Lim, Gyeonggi-do, KR;
Jung Seok OH, Gyeonggi-do, KR;
Eun Seok Choi, Gyeonggi-do, KR;
Jung Ryul Ahn, Gyeonggi-do, KR;
Se Hoon Kim, Gyeonggi-do, KR;
Yong Dae Park, Gyeonggi-do, KR;
In Geun Lim, Gyeonggi-do, KR;
Jung Seok Oh, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A three-dimensional (3-D) non-volatile memory device according to embodiment of the present invention includes a plurality of bit lines, at least one string row extending in a first direction coupled to the bit lines and including 2N strings, wherein the N includes a natural number, a common source selection line configured to control source selection transistors of the 2N strings included in a memory block, a first common drain selection line configured to control drain selection transistors of a first string and a 2N-th string among the 2N strings included in a memory block, and N−1 second common drain selection lines configured to control drain selection transistors of adjacent strings in the first direction among remaining strings other than the first string and the 2N-th string.