The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Nov. 29, 2010
Atsushi Maniwa, Kanagawa, JP;
Noriaki Oshima, Kanagawa, JP;
Kazuhisa Kawano, Kanagawa, JP;
Taishi Furukawa, Kanagawa, JP;
Hirokazu Chiba, Kanagawa, JP;
Toshiki Yamamoto, Kanagawa, JP;
Atsushi Maniwa, Kanagawa, JP;
Noriaki Oshima, Kanagawa, JP;
Kazuhisa Kawano, Kanagawa, JP;
Taishi Furukawa, Kanagawa, JP;
Hirokazu Chiba, Kanagawa, JP;
Toshiki Yamamoto, Kanagawa, JP;
Tosoh Corporation, Shunan-shi, Yamaguchi, JP;
Abstract
For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethyl-cyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.