The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
May. 17, 2012
Applicants:
Koji Akiyama, Yamanashi, JP;
Hirokazu Higashijima, Yamanashi, JP;
Yoshitsugu Tanaka, Yamanashi, JP;
Yasushi Akasaka, Hsin-chu, TW;
Koji Yamashita, Billerica, MA (US);
Inventors:
Koji Akiyama, Yamanashi, JP;
Hirokazu Higashijima, Yamanashi, JP;
Yoshitsugu Tanaka, Yamanashi, JP;
Yasushi Akasaka, Hsin-chu, TW;
Koji Yamashita, Billerica, MA (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
A disclosed fabrication method of a semiconductor device includes steps of depositing a dielectric film on a semiconductor substrate; thermally treating the dielectric film; and irradiating an ionized gas cluster onto the thermally treated dielectric film.