The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Feb. 09, 2010
Chun-kuang Chen, Hsinchu Hsien, TW;
Hsiao-wei Yeh, Jhudong Township, TW;
Chih-an Lin, Chong-He, TW;
Chien-wei Wang, Wufong Township, TW;
Feng-cheng Hsu, Sanxia, TW;
Chun-Kuang Chen, Hsinchu Hsien, TW;
Hsiao-Wei Yeh, Jhudong Township, TW;
Chih-An Lin, Chong-He, TW;
Chien-Wei Wang, Wufong Township, TW;
Feng-Cheng Hsu, Sanxia, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern.