The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2014

Filed:

Aug. 19, 2008
Applicants:

Jun Hatakeyama, Joetsu, JP;

Takao Yoshihara, Joetsu, JP;

Katsuya Takemura, Joetsu, JP;

Yoshio Kawai, Joetsu, JP;

Inventors:

Jun Hatakeyama, Joetsu, JP;

Takao Yoshihara, Joetsu, JP;

Katsuya Takemura, Joetsu, JP;

Yoshio Kawai, Joetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/30 (2006.01); G03F 7/40 (2006.01); G03F 7/38 (2006.01); G03F 7/039 (2006.01);
U.S. Cl.
CPC ...
G03F 7/40 (2013.01); G03F 7/38 (2013.01); G03F 7/0397 (2013.01);
Abstract

A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of up to 180 nm wavelength or EB; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half.


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