The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Mar. 02, 2012
Seiichi Watanabe, Boise, ID (US);
Manabu Sato, Miyagi, JP;
Kazuki Narishige, Yamanashi, JP;
Takanori Sato, Miyagi, JP;
Takayuki Katsunuma, Miyagi, JP;
Seiichi Watanabe, Boise, ID (US);
Manabu Sato, Miyagi, JP;
Kazuki Narishige, Yamanashi, JP;
Takanori Sato, Miyagi, JP;
Takayuki Katsunuma, Miyagi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
There is provided a semiconductor device manufacturing method for forming a step-shaped structure in a substrate by etching the substrate having thereon a multilayer film and a photoresist film on the multilayer film and serving as an etching mask. The multilayer film is formed by alternately layering a first film having a first permittivity and a second film having a second permittivity different from the first permittivity. The method includes a first process for plasma-etching the first film by using the photoresist film as a mask; a second process for exposing the photoresist film to hydrogen-containing plasma; a third process for trimming the photoresist film; and a fourth process for etching the second film by using the trimmed photoresist film and the plasma-etched first film as a mask. The step-shaped structure is formed in the multilayer film by repeatedly performing the first process to the fourth process in this sequence.