The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Nov. 21, 2008
Harry Chuang, Hsin-Chu, TW;
Kong-beng Thei, Hsin-Chu, TW;
Chiung-han Yeh, Tainan, TW;
Ming-yuan Wu, Hsin Chu, TW;
Mong-song Liang, Hsin-Chu, TW;
Harry Chuang, Hsin-Chu, TW;
Kong-Beng Thei, Hsin-Chu, TW;
Chiung-Han Yeh, Tainan, TW;
Ming-Yuan Wu, Hsin Chu, TW;
Mong-Song Liang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method is provided for forming a metal gate using a gate last process. A trench is formed on a substrate. The profile of the trench is modified to provide a first width at the aperture of the trench and a second width at the bottom of the trench. The profile may be formed by including tapered sidewalls. A metal gate may be formed in the trench having a modified profile. Also provided is a semiconductor device including a gate structure having a larger width at the top of the gate than the bottom of the gate.