The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Dec. 02, 2010
Le Wang, Wuxi New District, CN;
Linchun Gui, Wuxi New District, CN;
Kongwei Zhu, Wuxi New District, CN;
Zhiyong Zhao, Wuxi New District, CN;
Le Wang, Wuxi New District, CN;
Linchun Gui, Wuxi New District, CN;
Kongwei Zhu, Wuxi New District, CN;
Zhiyong Zhao, Wuxi New District, CN;
CSMC Technologies FAB1 Co., Ltd., Wuxi New District, CN;
CSMC Technologies FAB2 Co., Ltd., Wuxi New District, CN;
Abstract
A method for manufacturing a bipolar transistor includes forming a first epitaxial layer on a semiconductor substrate, forming a second epitaxial layer on the first epitaxial layer, forming an oxide layer on the second epitaxial layer, etching the oxide layer to form an opening in which the second epitaxial layer is exposed, and forming a third epitaxial layer in the opening. The first and third epitaxial layers have a first-type conductivity, and the second epitaxial layer has a second-type conductivity.