The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Dec. 20, 2012
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Liang-Chen Chi, Hsin-Chu, TW;
Wei-Lun Jian, Hsin-Chu, TW;
Chia-Ming Tsai, Zhubei, TW;
Yu-Min Chang, Hsin-Chu, TW;
Chin-Kun Wang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Structures and methods for reducing backside polysilicon peeling are disclosed. A structure includes a substrate having a first side and a second opposite side, a first dielectric layer on the second side of the substrate extending in a direction from an edge of the substrate towards a center of the substrate, a high-k layer on the first dielectric layer, and a polysilicon layer on the high-k layer. The first dielectric layer has a first innermost sidewall relative to the center of the substrate, and the high-k layer has a second innermost sidewall relative to the center of the substrate. The second innermost sidewall is within 2 millimeters from the first innermost sidewall in a direction parallel to the second side. The polysilicon layer extends towards the center of the substrate further than the first innermost sidewall.