The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Aug. 08, 2011
Ruilong Xie, Albany, NY (US);
Chang Seo Park, Clifton Park, NY (US);
William James Taylor, Iii, Clifton Park, NY (US);
John Iacoponi, Wappingers Falls, NY (US);
Ruilong Xie, Albany, NY (US);
Chang Seo Park, Clifton Park, NY (US);
William James Taylor, III, Clifton Park, NY (US);
John Iacoponi, Wappingers Falls, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Disclosed herein are various methods of forming metal-containing insulating material regions on a metal layer of a gate structure of a semiconductor device. In one example, the method includes forming a gate structure of a transistor, the gate structure comprising at least a first metal layer, and forming a first metal-containing insulating material region in the first metal layer by performing a gas cluster ion beam process using to implant gas molecules into the first metal layer.