The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Jul. 24, 2012
Mei-ling Chao, Hsinchu, TW;
Yi-chun Chen, Pingtung County, TW;
Lu-an Chen, Keelung, TW;
Tai-hsiang Lai, Hsinchu, TW;
Tien-hao Tang, Hsinchu, TW;
Mei-Ling Chao, Hsinchu, TW;
Yi-Chun Chen, Pingtung County, TW;
Lu-An Chen, Keelung, TW;
Tai-Hsiang Lai, Hsinchu, TW;
Tien-Hao Tang, Hsinchu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
An electrostatic discharge (ESD) includes a semiconductor substrate having the first conductive type, a well having the first conductive type, a buried layer having the second conductive type and a well having the second conductive type. The buried layer having a second conductive type is disposed in the semiconductor substrate under the well having the first conductive type. The well having the second conductive type disposed to divide the well having the first conductive type into a first well and a second well. The well having the second conductive type contacts the buried layer, and the well having the second conductive type and the buried layer are jointly used to isolate the first well from the second well.