The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Mar. 22, 2012
Nilay Anil Pradhan, Waltham, MA (US);
Stanislav S. Todorov, Topsfield, MA (US);
Kurt Decker-lucke, South Hamilton, MA (US);
Klaus Petry, Merrimac, MA (US);
Benjamin Colombeau, Salem, MA (US);
Baonian Guo, Andover, MA (US);
Nilay Anil Pradhan, Waltham, MA (US);
Stanislav S. Todorov, Topsfield, MA (US);
Kurt Decker-Lucke, South Hamilton, MA (US);
Klaus Petry, Merrimac, MA (US);
Benjamin Colombeau, Salem, MA (US);
Baonian Guo, Andover, MA (US);
Abstract
A method of forming a FinFET device. The method may include providing a substrate having a single crystalline region, heating the substrate to a substrate temperature effective for dynamically removing implant damage during ion implantation, implanting ions into the substrate while the substrate is maintained at the substrate temperature, and patterning the single crystalline region so as to form a single crystalline fin.