The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Dec. 08, 2010
David Cheung, Foster City, CA (US);
Haoquan Fang, Sunnyvale, CA (US);
Jack Kuo, Pleasanton, CA (US);
Ilia Kalinovski, Berkeley, CA (US);
Ted LI, Sunnyvale, CA (US);
Andrew Yao, San Jose, CA (US);
David Cheung, Foster City, CA (US);
Haoquan Fang, Sunnyvale, CA (US);
Jack Kuo, Pleasanton, CA (US);
Ilia Kalinovski, Berkeley, CA (US);
Ted Li, Sunnyvale, CA (US);
Andrew Yao, San Jose, CA (US);
Novellus Systems, Inc., Fremont, CA (US);
Abstract
Improved methods and apparatus for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues. Aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate. In certain embodiments, methods and apparatus remove photoresist material after high-dose ion implantation processes.