The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Mar. 23, 2012
Masatoshi Yoshikawa, Yokohama, JP;
Satoshi Seto, Kamakura, JP;
Hideaki Harakawa, Yokohama, JP;
Jyunichi Ozeki, Yokosuka, JP;
Tatsuya Kishi, Yokohama, JP;
Keiji Hosotani, Yokohama, JP;
Masatoshi Yoshikawa, Yokohama, JP;
Satoshi Seto, Kamakura, JP;
Hideaki Harakawa, Yokohama, JP;
Jyunichi Ozeki, Yokosuka, JP;
Tatsuya Kishi, Yokohama, JP;
Keiji Hosotani, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, BC, AlOand AlN.