The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Jan. 18, 2012
Lu-an Chen, Keelung, TW;
Chang-tzu Wang, Taoyuan County, TW;
Tai-hsiang Lai, Hsinchu, TW;
Tien-hao Tang, Hsinchu, TW;
Lu-An Chen, Keelung, TW;
Chang-Tzu Wang, Taoyuan County, TW;
Tai-Hsiang Lai, Hsinchu, TW;
Tien-Hao Tang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
Provided is a metal oxide semiconductor device, including a substrate, a gate, a first-type first heavily doped region, a first-type drift region, a second-type first heavily doped region, a contact, a first electrode, and a second electrode. The gate is disposed on the substrate. The first-type first heavily doped region is disposed in the substrate at a side of the gate. The first-type drift region is disposed in the substrate at another side of the gate. The second-type first heavily doped region is disposed in the first-type drift region. The contact is electrically connected to the second-type first heavily doped region. The contact is the closest contact to the gate on the first-type drift region. The first electrode is electrically connected to the contact, and the second electrode is electrically connected to the first-type first heavily doped region and the gate.