The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Jul. 25, 2011
Chin-i Liao, Tainan, TW;
Teng-chun Hsuan, Tainan, TW;
I-ming Lai, Kaohsiung, TW;
Chin-cheng Chien, Tainan, TW;
Chin-I Liao, Tainan, TW;
Teng-Chun Hsuan, Tainan, TW;
I-Ming Lai, Kaohsiung, TW;
Chin-Cheng Chien, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor device having epitaxial structures includes a gate structure positioned on a substrate, epitaxial structures formed in the substrate at two sides of the gate structure, and an undoped cap layer formed on the epitaxial structures. The epitaxial structures include a dopant, a first semiconductor material having a first lattice constant, and a second semiconductor material having a second lattice constant, and the second lattice constant is larger than the first lattice constant. The undoped cap layer also includes the first semiconductor material and the second semiconductor material. The second semiconductor material in the epitaxial structures includes a first concentration, the second semiconductor material in the undoped cap layer includes at least a first concentration, and the second concentration is lower than the first concentration.