The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Apr. 15, 2011
Tsuyoshi Kawakami, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Yasuhiro Kagawa, Tokyo, JP;
Kenji Hamada, Tokyo, JP;
Yoshiyuki Nakaki, Tokyo, JP;
Tsuyoshi Kawakami, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Yasuhiro Kagawa, Tokyo, JP;
Kenji Hamada, Tokyo, JP;
Yoshiyuki Nakaki, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A RESURF layer including a plurality of P-type implantation layers having a low concentration of P-type impurity is formed adjacent to an active region. The RESURF layer includes a first RESURF layer, a second RESURF layer, a third RESURF layer, a fourth RESURF layer, and a fifth RESURF layer that are arranged sequentially from the P-type base side so as to surround the P-type base. The second RESURF layer is configured with small regions having an implantation amount equal to that of the first RESURF layer and small regions having an implantation amount equal to that of the third RESURF layer being alternately arranged in multiple. The fourth RESURF layer is configured with small regions having an implantation amount equal to that of the third RESURF layer and small regions having an implantation amount equal to that of the fifth RESURF layer being alternately arranged in multiple.