The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Nov. 29, 2011
Applicant:
Shuogang Huang, San Jose, CA (US);
Inventor:
Shuogang Huang, San Jose, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
In some embodiments, the present invention discloses an etchant solution hydrochloric acid and nitric acid to etch doped polysilicon at low etch rates. The doped polysilicon can be doped with Ge, In, B and Ga. Preferably, the concentration of hydrochloric acid can be greater than 1 vol %, and the concentration of nitric acid is greater than 15 vol %.
Huang, Shuogang. (2014). [object object] (U.S. Patent No. 8716145). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8716145
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile