The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2014

Filed:

Nov. 03, 2008
Applicants:

Judy Huckabay, Fremont, CA (US);

Milind Weling, Pleasanton, CA (US);

Abdurrahman Sezginer, Monte Sereno, CA (US);

Inventors:

Judy Huckabay, Fremont, CA (US);

Milind Weling, Pleasanton, CA (US);

Abdurrahman Sezginer, Monte Sereno, CA (US);

Assignee:

Cadence Design Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/033 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/30621 (2013.01); H01L 21/0334 (2013.01);
Abstract

Methods of semiconductor device fabrication techniques using double patterning are disclosed. According to various embodiments of the invention, methods of semiconductor device fabrication using self-aligned double patterning are provided. Particular embodiments of the invention allow creation of logic circuit patterns using two lithographic operations. One embodiment of the invention employs self-aligned double patterning to define two or more sets of parallel line features with a connection feature between the sets. In such embodiments, the sets of parallel line features along with the connection features are formed using two lithographic masks, without the need for an additional mask layer to form the connection. In other embodiments, other features in addition to the connection can be added in the same mask layer.


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