The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2014

Filed:

Mar. 10, 2010
Applicants:

Kunal Parekh, Boise, ID (US);

Ceredig Roberts, Boise, ID (US);

Thy Tran, Boise, ID (US);

Jim Jozwiak, Boise, ID (US);

David Hwang, Boise, ID (US);

Inventors:

Kunal Parekh, Boise, ID (US);

Ceredig Roberts, Boise, ID (US);

Thy Tran, Boise, ID (US);

Jim Jozwiak, Boise, ID (US);

David Hwang, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method is disclosed for forming a memory device having buried access lines (e.g., wordlines) and buried data/sense lines (e.g., digitlines) disposed below vertical cell contacts. The buried wordlines may be formed trenches in a substrate extending in a first direction, and the buried digitlines may be formed from trenches in a substrate extending in a second direction perpendicular to the first direction. The buried digitlines may be coupled to a silicon sidewall by a digitline contact disposed between the digitlines and the silicon substrate.


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