The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Sep. 07, 2012
Tien-wei Yu, Kaohsiung, TW;
Chin-cheng Chien, Tainan, TW;
I-ming Lai, Kaohsiung, TW;
Shin-chi Chen, Penghu County, TW;
Chih-yueh LI, Taipei, TW;
Fong-lung Chuang, Hsinchu, TW;
Chin-i Liao, Tainan, TW;
Kuan-yu Lin, Taichung, TW;
Tien-Wei Yu, Kaohsiung, TW;
Chin-Cheng Chien, Tainan, TW;
I-Ming Lai, Kaohsiung, TW;
Shin-Chi Chen, Penghu County, TW;
Chih-Yueh Li, Taipei, TW;
Fong-Lung Chuang, Hsinchu, TW;
Chin-I Liao, Tainan, TW;
Kuan-Yu Lin, Taichung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating a compound semiconductor epitaxial structure includes the following steps. Firstly, a first compound epitaxial layer is formed on a substrate. Then, a continuous epitaxial deposition process is performed to form a second compound epitaxial layer on the first compound epitaxial layer, so that the second compound epitaxial layer has a linearly-decreased concentration gradient of metal. Afterwards, a semiconductor material layer is formed on the second compound epitaxial layer.