The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Jan. 31, 2013
International Business Machines Corporation, Armonk, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Erik M. Dahlstrom, Santa Clara, CA (US);
Peter B. Gray, Jericho, VT (US);
David L. Harame, Essex Junction, VT (US);
Qizhi Liu, Waltham, MA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods for fabricating bipolar junction transistors with self-aligned emitter and extrinsic base, bipolar junction transistors made by the methods, and design structures for a BiCMOS integrated circuit. The bipolar junction transistor is fabricated using a sacrificial emitter pedestal that provides a sacrificial mandrel promoting self-alignment between the emitter and the extrinsic base. The sacrificial emitter pedestal is subsequently removed to open an emitter window extending to the intrinsic base. An emitter is formed in the emitter window that lands on the intrinsic base.