The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Apr. 27, 2012
Masumi Saitoh, Yokohama, JP;
Toshinori Numata, Kamakura, JP;
Kiwamu Sakuma, Yokohama, JP;
Haruka Kusai, Yokohama, JP;
Takayuki Ishikawa, Yokohama, JP;
Masumi Saitoh, Yokohama, JP;
Toshinori Numata, Kamakura, JP;
Kiwamu Sakuma, Yokohama, JP;
Haruka Kusai, Yokohama, JP;
Takayuki Ishikawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes a fin type stacked layer structure which has first to third semiconductor layers, and first to third layer select transistors to select one of the first to third semiconductor layers. The second layer select transistor is normally on in the second semiconductor layer, and is controlled to be on or off in the first and third semiconductor layers. A channel region of the second semiconductor layer which is covered with a gate electrode of the second layer select transistor has a metal silicide.