The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2014

Filed:

Mar. 12, 2010
Applicants:

Michal Danek, Cupertino, CA (US);

Tom Mountsier, San Jose, CA (US);

Jonathan Reid, Sherwood, OR (US);

Juwen Gao, San Jose, CA (US);

Aaron Fellis, San Jose, CA (US);

Inventors:

Michal Danek, Cupertino, CA (US);

Tom Mountsier, San Jose, CA (US);

Jonathan Reid, Sherwood, OR (US);

Juwen Gao, San Jose, CA (US);

Aaron Fellis, San Jose, CA (US);

Assignee:

Novellus Systems, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

Apparatus and methods for filling through silicon vias (TSV's) with copper having an intervening tungsten layer between the copper plug and the silicon are disclosed. Methods are useful for Damascene processing, with or without a TSV feature. The tungsten layer serves as a diffusion barrier, a seed layer for copper electrofill and a means of reducing CTE-induced stresses between copper and silicon. Adhesion of the tungsten layer to the silicon and of the copper layer to the tungsten is described.


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