The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
May. 07, 2013
Applicant:
Tel Epion Inc., Billerica, MA (US);
Inventors:
Noel Russell, Waterford, NY (US);
John J. Hautala, Beverly, MA (US);
John Gumpher, Niskayuna, NY (US);
Assignee:
TEL Epion Inc., Billerica, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.
Russell, Noel. (2014). Method to alter silicide properties using gcib treatment (U.S. Patent No. 8709944). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8709944
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile