The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2014

Filed:

Jul. 23, 2012
Applicants:

Kozo Makiyama, Kawasaki, JP;

Naoya Okamoto, Isehara, JP;

Toshihiro Ohki, Hadano, JP;

Yuichi Minoura, Zama, JP;

Shirou Ozaki, Yamato, JP;

Toyoo Miyajima, Isehara, JP;

Inventors:

Kozo Makiyama, Kawasaki, JP;

Naoya Okamoto, Isehara, JP;

Toshihiro Ohki, Hadano, JP;

Yuichi Minoura, Zama, JP;

Shirou Ozaki, Yamato, JP;

Toyoo Miyajima, Isehara, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01);
U.S. Cl.
CPC ...
Abstract

An HEMT includes, on an SiC substrate, a compound semiconductor layer, a silicon nitride (SiN) protective film having an opening and covering the compound semiconductor layer, and a gate electrode formed on the compound semiconductor layer so as to plug the opening. In the protective film, a projecting portion projecting from a side surface of the opening is formed at a lower layer portion


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