The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Nov. 17, 2010
Georgios Vellianitis, Redhill Surrey, GB;
Gilberto Curatola, Redhill Surrey, GB;
Kyriaki Fotopoulou, Redhill Surrey, GB;
Nader Akil, Redhill Surrey, GB;
Georgios Vellianitis, Redhill Surrey, GB;
Gilberto Curatola, Redhill Surrey, GB;
Kyriaki Fotopoulou, Redhill Surrey, GB;
Nader Akil, Redhill Surrey, GB;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method of manufacturing Schottky diodes in a CMOS process includes forming wells, including first wells () for forming CMOS devices and second wells () for forming Schottky devices. Then, transistors are formed in the first wells, the second wells protected with a protection layer () and suicide contacts () formed to source and drain regions in the first wells. The protection layer is then removed, a Schottky material deposited and etched away except in a contact region in each second well to form a Schottky contact between the Schottky material () and each second well ().