The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8709267 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 29, 2014

Filed:

Jul. 21, 2011
Applicants:

Chwen Yu, Taipei, TW;

Fei-gwo Tsai, Tainan, TW;

Kai-wen Cheng, Hsinchu County, TW;

Inventors:

Chwen Yu, Taipei, TW;

Fei-Gwo Tsai, Tainan, TW;

Kai-Wen Cheng, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for patterning material layers, which may be implemented in forming integrated circuit device features, are disclosed. In an example, a method includes forming a first resist layer over a material layer; forming a second resist layer over the first resist layer; forming an opening that extends through the second resist layer and the first resist layer to expose the material layer, wherein the opening has a substantially constant width in the second resist layer and a tapered width in the first resist layer; and performing a tilt-angle deposition process to form a feature over the exposed material layer.


Find Patent Forward Citations

Yu, Chwen. (2014). Double patterning method using tilt-angle deposition (U.S. Patent No. 8709267). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8709267

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