The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8703590 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 22, 2014

Filed:

Dec. 08, 2010
Applicants:

Takahiro Ito, Toyota, JP;

Takahiro Kozawa, Nagoya, JP;

Kenji Nakashima, Nisshin, JP;

Keeyoung Jun, Nagoya, JP;

Inventors:

Takahiro Ito, Toyota, JP;

Takahiro Kozawa, Nagoya, JP;

Kenji Nakashima, Nisshin, JP;

Keeyoung Jun, Nagoya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A process for supplying a mixed material gas that includes a chlorosilane gas and a carrier gas to a surface of a substrate heated at 1200 to 1400° C. from a direction perpendicular to the surface is provided. A supply rate of the chlorosilane gas is equal to or more than 200 μmol per minute per 1 cmof the surface of the substrate. The carrier gas includes a hydrogen gas and at least one or more gases selected from argon, xenon, krypton and neon.


Find Patent Forward Citations

Ito, Takahiro. (2014). Vapor-phase growth method for semiconductor film (U.S. Patent No. 8703590). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8703590

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